Unitemp (Germany) RTP series rapid thermal processing (RTP/RTA) ovens with top and bottom infrared lamp heating, for wafers up to 100, 150 or 200 mm. Up to 1000°C (1200°C or 1500°C optional by model), single-wafer ramp-up up to 150 K/s (200 K/s optional), vacuum 1×10⁻³ hPa (10⁻⁶ hPa range on HV versions) and up to 4 MFC gas lines — for annealing, oxidation, nitridation and alloying.
Rapid Thermal Processing (RTP/RTA) Ovens for R&D and Production
The Unitemp (Germany) RTP series are ovens built specifically for rapid thermal processing (RTP) and rapid thermal annealing (RTA): annealing of silicon and compound semiconductor wafers, rapid thermal oxidation (RTO), rapid thermal nitridation (RTN), alloying, crystallization and densification. They suit R&D as well as cost-effective, high-throughput production, and can be integrated into existing lines.
RTP-100, RTP-150 and RTP-200 take 100, 150 and 200 mm wafers, and RTP-150 also takes 156 × 156 mm substrates. Infrared lamps above and below the part can be selected by software for top, bottom or both-side heating, with zone control. Maximum temperature is 1000°C, with 1200°C or 1500°C options depending on the model.
Single-wafer ramp-up reaches 150 K/s (RTP-100), or 200 K/s with the extended power (-EP) option; cooling from 1000°C to 400°C reaches about 200 K/min, shortening process time without compromising quality. The chamber is water-cooled and parts are cooled with nitrogen.
Standard vacuum is 1×10⁻³ hPa, with high-vacuum (-HV) versions in the 10⁻⁶ hPa range. Up to 4 MFC gas lines handle nitrogen, argon, oxygen, forming gas and hydrogen (hydrogen requires the safety option). The SIMATIC® controller with 7″ touch panel stores 50 programs of 50 steps, with integrated data logging and remote control.
Three Wafer Sizes
RTP-100 / RTP-100-HV
100 mm wafer | Ramp-up up to 150 K/s (200 K/s optional)
RTP-150
150 mm wafer or 156 × 156 mm | Ramp-up up to 75 K/s (150 K/s optional)
RTP-200 / RTP-200-HV
200 mm wafer | Ramp-up up to 50 K/s (100 K/s optional)
Floor cabinet integration
Optional floor cabinet with integrated heat exchanger (-CAB)
Quartz Trays for Different Parts (RTP-200)
100 mm wafer
Quartz frame RTP-QF-200-100 mm
150 mm wafer
Quartz frame RTP-QF-200-150 mm
200 mm wafer
Quartz frame RTP-QF-200-200 mm
Graphite crucible
Inner size 201 × 201 × 7 mm, for small samples or non-wafer parts
Models and Specifications
| Item | RTP-100 | RTP-150 | RTP-200 |
|---|---|---|---|
| Max. part size | 100 mm (4") wafer | 150 mm wafer or 156 × 156 mm substrate | 200 mm wafer or 182 × 182 mm substrate |
| Graphite susceptor (i.d.) (mm) | 106 × 106 × 1.75 | 157 × 157 × 2 | 206 × 206 × 1 |
| Graphite crucible (i.d.) (mm) | 90 dia. × 8 | 134 × 134 × 11 | 201 × 201 × 7 |
| Max. temperature | 1000°C (1200°C or 1500°C optional) | 1000°C (1200°C optional) | 1000°C (1200°C optional) |
| Max. ramp-up rate (single wafer) | 150 K/s (-EP option: 200 K/s) | 75 K/s (-EP option: 150 K/s) | 50 K/s (-EP option: 100 K/s) |
| Ramp-down rate | 1000→400°C up to 200 K/min | ||
| Heating power | 20 kW (-EP: 27 kW) | 21 kW (-EP: 42 kW) | 21 kW (-EP: 42 kW) |
| Heating | Top and bottom IR lamps, selectable by software; zone control | ||
| Temperature uniformity | ≤ ±1.5% | ≤ 1.5% | ≤ 1.0% |
| Vacuum | 1×10⁻³ hPa; 10⁻⁶ hPa on RTP-100-HV | 1×10⁻³ hPa | 1×10⁻³ hPa; 6×10⁻⁶ hPa on RTP-200-HV |
| Process gas lines | Nitrogen MFC 5 nlm × 1, up to 4 lines | ||
| Process gases | Nitrogen, argon, oxygen, forming gas, hydrogen (hydrogen requires safety option) | ||
| Controller | SIMATIC® 7" touch panel; 50 programs × 50 steps; data logging | ||
| Cooling | Water-cooled chamber; parts cooled by nitrogen | ||
| Dimensions (W × D × H) (mm) | 504 × 505 (700) × 570 | 505 × 525 × 570 | approx. 505 × 525 × 570 |
| Weight (kg) | 55 | approx. 55 | approx. 70 |
| Power supply | 400/230 V, 20 kW | 400/230 V, 21 kW | 3 × 400/230 V, 21 kW |
Highlighted rows differ between models; values shared by all models are merged into one cell.
Ramp-up rates apply to a single wafer. For extended holding time (-TX), oxygen and moisture analyzers, signal towers, quartz trays and graphite susceptors in various sizes, a second process chamber, floor cabinets, vacuum pumps and water chillers, please contact Utrun-Tech.
For full specifications and dimensional drawings, see the Unitemp RTP series page and model datasheets.
Typical Applications
Rapid thermal annealing and implant activation
RTA of silicon and compound semiconductor wafers, contact annealing and dopant activation after implantation — target temperature in seconds with a low thermal budget.
Rapid thermal oxidation and nitridation
RTO in oxygen and RTN in nitrogen, with up to 4 MFC gas lines for precise gas mixing.
Alloying, crystallization and densification
SiAu, SiAl and SiMo alloying, low-k dielectrics, film crystallization and densification, and Si solar cells on glass.
Frequently Asked Questions
What is the difference between RTP, RTA, RTO and RTN?
RTP (rapid thermal processing) is the umbrella term for heating a wafer to high temperature within seconds and cooling it quickly. By purpose and atmosphere it includes RTA (rapid thermal annealing, e.g. dopant activation after implantation), RTO (rapid thermal oxidation in oxygen) and RTN (rapid thermal nitridation in nitrogen). With up to 4 MFC gas lines, one Unitemp RTP oven can switch between these processes.
RTP-100, RTP-150 or RTP-200?
Start with wafer size: 100, 150 and 200 mm, with RTP-150 also taking 156 × 156 mm substrates. Smaller models ramp faster: RTP-100 up to 150 K/s (200 K/s optional), RTP-150 75 K/s (150 K/s optional), RTP-200 50 K/s (100 K/s optional) for a single wafer. Only RTP-100 offers a 1500°C option. Smaller wafers can also run in a larger model with the matching quartz tray.
Can hydrogen be used?
Yes, with the hydrogen safety option (sensor and monitoring). Standard process gases are nitrogen, argon, oxygen and forming gas; a safety unit is also available when forming gas and oxygen are used.
What is the HV version?
Models with -HV are high-vacuum versions: standard models reach 1×10⁻³ hPa, RTP-100-HV reaches 10⁻⁶ hPa and RTP-200-HV 6×10⁻⁶ hPa — for processes more sensitive to residual oxygen and moisture.